丝印：NDSH25170A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：357.68 Kbytes 页数：6 Pages

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：357.68 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH30120CDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：302.2 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH30120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：321.94 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Schottky Diode 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN test

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：211.23 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH40120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：295.21 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：DSH50120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：211.05 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SOP8 N 20V 6MR

文件：737.49 Kbytes 页数：5 Pages

BYCHIP

百域芯

PDF上传者：深圳市凯睿晟科技有限公司

Standard, piano and right angle models

文件：130.169 Kbytes 页数：4 Pages

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Distinctive features and specifications

文件：130.169 Kbytes 页数：4 Pages

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