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首页 >NDS>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
NDS8858H	文件：350.72 Kbytes Page：12 Pages	Complementry MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ 文件：350.72 Kbytes 页数：12 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8926	文件：331.08 Kbytes Page：10 Pages	Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：331.08 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8928	文件：354.56 Kbytes Page：13 Pages	Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf 文件：354.56 Kbytes 页数：13 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8934	文件：77.78 Kbytes Page：6 Pages	Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：77.78 Kbytes 页数：6 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8936	文件：330.73 Kbytes Page：10 Pages	Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：330.73 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8947	文件：331.49 Kbytes Page：10 Pages	Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：331.49 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8958	文件：354.63 Kbytes Page：13 Pages	Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo 文件：354.63 Kbytes 页数：13 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS8961	文件：331.09 Kbytes Page：10 Pages	Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These 文件：331.09 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS9400	文件：329.34 Kbytes Page：10 Pages	Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：329.34 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
NDS9400A	文件：329.34 Kbytes Page：10 Pages	Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：329.34 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

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技术参数

电路结构：
单刀单掷
开关位数：
2位
引脚间距：
2.54mm
颜色：
红色

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	NDs	INFINEON	24+	SOT-343	18206		询价
深圳市安富世纪电子有限公司	NDS	INFINEON	23+	SOT-343	8000	只做原装现货	询价
深圳市弘为电子有限公司	NDS355AN(Q)	FAIRCHILD	24+	原封装	7857	原装现货假一罚十	询价
深圳市毅创腾电子科技有限公司	NDS355AN	FAIRCHILD	23+	SOT-23	1200	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
千层芯半导体(深圳)有限公司	NDS7002A	FAIRCHILD	24+	SMD	25000	一级专营品牌全新原装热卖	询价
齐创科技(上海,北京,青岛)有限公司	NDS356AP	ON	23+	SOT-23	30000	原装正品,假一罚十	询价
深圳市亿智腾科技有限公司	NDS9410A	FAIRCHIL	24+	SOP	6430	原装现货/欢迎来电咨询	询价
深圳市百诺芯科技有限公司	NDS332P	FAIRCHILD/仙童	23+	NA	2860	原装正品代理渠道价格优势	询价
深圳市能元时代电子有限公司	NDS9953	NS	23+	SOP-8	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市英卓尔科技有限公司	NDS9959	FAIRCHILD	20+	SOP8	2960	诚信交易大量库存现货	询价

更多NDS供应商更新时间2026-1-20 15:30:00

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