| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Complementry MOSFET Half Bridge General Description These Complementary MOSFET half bridge devices are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ 文件：350.72 Kbytes 页数：12 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：331.08 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf 文件：354.56 Kbytes 页数：13 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：77.78 Kbytes 页数：6 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：330.73 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes 文件：331.49 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo 文件：354.63 Kbytes 页数：13 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These 文件：331.09 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：329.34 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit 文件：329.34 Kbytes 页数：10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD |
技术参数
- 电路结构：
单刀单掷
- 开关位数：
2位
- 引脚间距：
2.54mm
- 颜色：
红色
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
24+ |
SOT-343 |
18206 |
询价 | |||
INFINEON |
23+ |
SOT-343 |
8000 |
只做原装现货 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT23 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
询价 | ||
ON |
23+ |
SOT-23 |
3000 |
全新原装正品!一手货源价格优势! |
询价 | ||
onsemi |
2130 |
12000 |
自营现货,只做正品 |
询价 | |||
ON/安森美 |
26+ |
SOT-23 |
76200 |
全新原装现货库存 本公司承诺原装正品假一赔百 |
询价 | ||
FSC |
2406+ |
3866 |
优势代理渠道,原装现货,可全系列订货 |
询价 | |||
onsemi |
22+ |
NA |
7500 |
原装现货,质量保证,可出样品,可开发票 |
询价 | ||
ON |
23+ |
SOT-23 |
30000 |
原装正品,假一罚十 |
询价 | ||
FAIRCHILD |
20+ |
SOP8 |
2960 |
诚信交易大量库存现货 |
询价 |
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