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NDS8858H

Complementry MOSFET Half Bridge

General Description These Complementary MOSFET half bridge devices are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energ

文件:350.72 Kbytes 页数:12 Pages

FAIRCHILD

仙童半导体

NDS8926

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件:331.08 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

NDS8928

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perf

文件:354.56 Kbytes 页数:13 Pages

FAIRCHILD

仙童半导体

NDS8934

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件:77.78 Kbytes 页数:6 Pages

FAIRCHILD

仙童半导体

NDS8936

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件:330.73 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

NDS8947

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件:331.49 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

NDS8958

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

文件:354.63 Kbytes 页数:13 Pages

FAIRCHILD

仙童半导体

NDS8961

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These

文件:331.09 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

NDS9400

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件:329.34 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

NDS9400A

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件:329.34 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

技术参数

  • 电路结构:

    单刀单掷

  • 开关位数:

    2位

  • 引脚间距:

    2.54mm

  • 颜色:

    红色

供应商型号品牌批号封装库存备注价格
INFINEON
24+
SOT-343
18206
询价
INFINEON
23+
SOT-343
8000
只做原装现货
询价
FAIRCHILD
24+
原封装
7857
原装现货假一罚十
询价
FAIRCHILD
23+
SOT-23
1200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
FAIRCHILD
24+
SMD
25000
一级专营品牌全新原装热卖
询价
ON
23+
SOT-23
30000
原装正品,假一罚十
询价
FAIRCHIL
24+
SOP
6430
原装现货/欢迎来电咨询
询价
FAIRCHILD/仙童
23+
NA
2860
原装正品代理渠道价格优势
询价
NS
23+
SOP-8
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
FAIRCHILD
20+
SOP8
2960
诚信交易大量库存现货
询价
更多NDS供应商 更新时间2026-1-20 15:30:00