N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particula

文件：77.5 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.These devices are particula

文件：77.5 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：1.03547 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：76.45 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：351A；Package：SOT-23；N-Channel, Logic Level, PowerTrench® MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low v

文件：231.93 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：486.17 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：75.67 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：351AN；Package：SOT23；N-Channel Enhancement Mode MOSFET

Features ® Vos =30Vio = 2A Rosin

文件：910.89 Kbytes 页数：3 Pages

TECHPUBLIC

台舟电子