丝印：610T；Package：SOT-23；1.7Q ,60V P-Channel MOSFET

Product Summary @ Vdss=60V ® ID=05A @ Rbps(oN)=1.7Q@VGs=-10V

文件：2.51294 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

SOCKETS

Features 8-pin 35mm DIN rail or surface mount octal socket. Rated at 10A @ 600VAC and has pressure clamp terminals.

文件：210.96 Kbytes 页数：1 Pages

LITTELFUSE

力特

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.64 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.64 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

文件：1.45725 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：1.04841 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.68 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：.39K；Package：SOT-23；P-Channel Mosfet

Application Load/Power Switching Interfacing Switching Logic Level Shift

文件：1.54866 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.68 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体