NDS335中文资料仙童半导体数据手册PDF规格书

General Description

These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

特性 Features

■ 1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V

RDS(ON) = 0.11 Ω @ VGS= 4.5 V.

■ Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.

■ High density cell design for extremely low RDS(ON).

■ Exceptional on-resistance and maximum DC current capability.