N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.51 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Neutral Grounding Resistor System , NGR SERIES – US

Description High-resistance grounding prevents many of the problems that are associated with ungrounded and solidly grounded electrical distribution and utilization systems. High-resistance grounding can limit point-of-fault damage, eliminate transient overvoltages, reduce the arc-flash hazar

文件：1.14916 Mbytes 页数：9 Pages

LITTELFUSE

力特

Silicon NPN RF Power Transistor Designed for power amplifier

Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: • Specified 12.5V, 30MHz Characteristics: Output Power = 80W Minimum Gain = 12dB

文件：59.52 Kbytes 页数：2 Pages

NTE

Data Matrix Accessories

文件：250.46 Kbytes 页数：2 Pages

PF

倍加福