NDS335N中文资料仙童半导体数据手册PDF规格书
NDS335N规格书详情
General Description
These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
特性 Features
■ 1.7 A, 20 V. RDS(ON) = 0.14 Ω @ VGS= 2.7 V
RDS(ON) = 0.11 Ω @ VGS= 4.5 V.
■ Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
产品属性
- 型号：
NDS335N
- 功能描述：
MOSFET N-Ch LL FET Enhancement Mode
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FSC |
2016+ |
SOT23 |
20013 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FAIRCHILD |
23+ |
NA |
2500 |
全新原装假一赔十 |
询价 | ||
FAIRCHI |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
154313 |
明嘉莱只做原装正品现货 |
询价 | ||
FAIRCHILD |
18+ |
SOT-23 |
6000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD |
12+ |
SOT23 |
3000 |
原装现货价格有优势量多可发货 |
询价 | ||
FAIRCHILD |
24+ |
SOT23-3 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
FAIRCHILD |
24+ |
SOT23-5 |
8540 |
只做原装正品现货或订货假一赔十! |
询价 | ||
FAIRCHILD |
24+ |
SOT-23 |
25000 |
一级专营品牌全新原装热卖 |
询价 |
