P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

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VBSEMI

微碧半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

1/2 PRESS-FIT STRAIGHT LEAD DIODES

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SHUNYE

顺烨电子

JRC SAW FILTER

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NJRCNew Japan Radio

新日本无线株式会社

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

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NTE