P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：78.57 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-0.9 A (VGS =-4.5V) ● RDS(ON)

文件：1.69978 Mbytes 页数：5 Pages

KEXIN

科信电子

丝印：352A；Package：SOT-23-3；P-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：271.06 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

P-Channel 30 V (D-S) MOSFET

文件：1.047849 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P 沟道逻辑电平增强型场效应晶体管，-30V，-0.9A，300mΩ

这些P沟道逻辑电平增强型功率场效应晶体管采用飞兆专有的高密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑电源管理、便携电子产品及其他电池供电电路等低电压应用，此类应用需要在很小尺寸的表面贴装封装中实现快速高侧开关和低线内功率损耗。 • -0.9 A, -30 VrDS(ON) = 0.5 Ω @ VGS = -4.5 VrDS(ON) = 0.3 Ω @ VGS = -10 V\n• Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.\n• High Density Cell Design for Extremely Low rDS(ON)\n• Exceptional On-Resistan;

ONSEMI

安森美半导体

Trans MOSFET P-CH 30V 0.9A 3-Pin SuperSOT T/R

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