P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

文件：78.74 Kbytes 页数：6 Pages

Fairchild

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

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P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

文件：78.74 Kbytes 页数：6 Pages

Fairchild

仙童半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.02 Kbytes 页数：6 Pages

Fairchild

仙童半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.16 Kbytes 页数：9 Pages

VBSEMI

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P-Channel 30 V (D-S) MOSFET

文件：1.04768 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

-30V P 沟道逻辑电平增强型场效应晶体管

SuperSOT™-3 P沟道逻辑电平增强型场效应晶体管采用飞兆专有的高密度DMOS技术生产而成。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑电源管理、便携电子产品及其他电池供电电路等低电压应用，此类应用需要在很小尺寸的表面贴装封装中实现快速高侧开关和低线内功率损耗。 • -1.1 A, -30 VrDS(ON) = 0.3 Ω @ VGS = -4.5 VrDS(ON) = 0.2 Ω @ VGS = -10 V\n• Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.\n• High Density Cell Design for Extremely Low rDS(ON)\n• Exceptional On-Resistan;

ONSEMI

安森美半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体