P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件：78.02 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.16 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

Neutral Grounding Resistor System , NGR SERIES – US

Description High-resistance grounding prevents many of the problems that are associated with ungrounded and solidly grounded electrical distribution and utilization systems. High-resistance grounding can limit point-of-fault damage, eliminate transient overvoltages, reduce the arc-flash hazar

文件：1.14916 Mbytes 页数：9 Pages

Littelfuse

力特

1/2 PRESS-FIT STRAIGHT LEAD DIODES

文件：198.67 Kbytes 页数：2 Pages

SHUNYE

顺烨电子

200MHz, CMOS OPERATIONAL AMPLIFIER

文件：263.53 Kbytes 页数：13 Pages

BURR-BROWN