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NDS356AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particular

文件:78.74 Kbytes 页数:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDS356AP-NL

P-Channel 30 V (D-S) MOSFET

文件:1.04768 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

NDS356AP

-30V P 沟道逻辑电平增强型场效应晶体管

SuperSOT™-3 P沟道逻辑电平增强型场效应晶体管采用飞兆专有的高密度DMOS技术生产而成。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 这些器件特别适合笔记本电脑电源管理、便携电子产品及其他电池供电电路等低电压应用,此类应用需要在很小尺寸的表面贴装封装中实现快速高侧开关和低线内功率损耗。 • -1.1 A, -30 VrDS(ON) = 0.3 Ω @ VGS = -4.5 VrDS(ON) = 0.2 Ω @ VGS = -10 V\n• Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.\n• High Density Cell Design for Extremely Low rDS(ON)\n• Exceptional On-Resistan;

ONSEMI

安森美半导体

NDS356P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suit

文件:78.02 Kbytes 页数:6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NDS356P

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件:465.16 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

NGRUS356

Neutral Grounding Resistor System , NGR SERIES – US

Description High-resistance grounding prevents many of the problems that are associated with ungrounded and solidly grounded electrical distribution and utilization systems. High-resistance grounding can limit point-of-fault damage, eliminate transient overvoltages, reduce the arc-flash hazar

文件:1.14916 Mbytes 页数:9 Pages

Littelfuse

力特

技术参数

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -30

  • VGS Max (V):

    20

  • VGS(th) Max (V):

    -3

  • ID Max (A):

    -1.1

  • PD Max (W):

    0.5

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    300

  • RDS(on) Max @ VGS = 10 V(mΩ):

    200

  • Qg Typ @ VGS = 10 V (nC):

    3.4

  • Ciss Typ (pF):

    280

  • Package Type:

    SOT-23-3

供应商型号品牌批号封装库存备注价格
ON/安森美
25+
SOT-23
37631
ON/安森美全新特价NDS356AP即刻询购立享优惠#长期有货
询价
FAIRCHILD
0516+
SOT-23
1600
全新原装绝对自己公司现货
询价
FSC
16+
SOT-23
25500
进口原装现货/价格优势!
询价
ON/安森美
2019+
SOT-23
78550
原厂渠道 可含税出货
询价
ON
21+
SOT-23
30000
全新原装公司现货
询价
FAIRCHILD/仙童
24+
QFN
2494
只做原厂渠道 可追溯货源
询价
ON
23+
SOT-23
32000
正规渠道,只有原装!
询价
FAIRCHILD/仙童
23+
SOT23-3
29600
一级分销商!
询价
ON/安森美
22+
SOT-23
9000
原装正品
询价
FAIRCHILD/仙童
2019+PB
SOT-23
25500
原装正品 可含税交易
询价
更多NDS356AP供应商 更新时间2025-10-12 14:14:00