NDS356P中文资料仙童半导体数据手册PDF规格书
NDS356P规格书详情
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
特性 Features
■ -1.1 A, -20V. RDS(ON) = 0.3Ω @ VGS = -4.5V.
■ Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
■ Compact industry standard SOT-23 surface mount package.
产品属性
- 型号：
NDS356P
- 功能描述：
MOSFET DISC BY MFG 7/02
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NS |
1997 |
SOT23 |
1101 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
501 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT-23 |
37632 |
ONSEMI/安森美全新特价NDS356P即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
23+ |
SOT23-3 |
50000 |
只做原装正品 |
询价 | ||
FAIRCHILD/仙童 |
2450+ |
3-SSOT |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
FAIRCHILD/仙童 |
新年份 |
SOT-23 |
65000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
询价 | ||
FAIRCHILD |
2025+ |
SOT23-3 |
5185 |
全新原厂原装产品、公司现货销售 |
询价 | ||
FAIRCHILD |
25+ |
10 |
公司优势库存 热卖中! |
询价 | |||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Bychip/百域芯 |
21+ |
SOT-23 |
30000 |
优势供应 品质保障 可开13点发票 |
询价 |
