NDS336P中文资料仙童半导体数据手册PDF规格书

General Description

SuperSOTTM -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high

density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics,and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

特性 Features

-1.2A, -20 V, RDS(ON) = 0.27 W@ VGS = -2.7 V

RDS(ON) = 0.2 W@ VGS = -4.5 V.

Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.0V.

Proprietary package design using copper lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low RDS(ON)

Exceptional on-resistance and maximum DC current capability.

Compact industry standard SOT-23 surface Mount package.