NDS352AP中文资料仙童半导体数据手册PDF规格书
NDS352AP规格书详情
General Description
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
特性 Features
■ -0.9 A, -30 V. RDS(ON) = 0.5 Ω @ VGS = -4.5 V
RDS(ON) = 0.3 Ω @ VGS = -10 V.
■ Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
产品属性
- 型号：
NDS352AP
- 功能描述：
MOSFET P-Ch LL FET Enhancement Mode
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-23 |
50608 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
询价 | ||
FAIRCHILD/仙童 |
24+ |
NA/ |
1368 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
FAIRCHILD |
2016+ |
SOT23 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
FAIR |
23+ |
SOT23 |
12000 |
全新原装假一赔十 |
询价 | ||
FAI |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
FAIRCHILD |
NEW |
原厂封装 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
进口仙童 |
24+ |
SOT-23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
询价 | ||
ON/安森美 |
25+ |
SOT-23 |
37628 |
ON/安森美全新特价NDS352AP即刻询购立享优惠#长期有货 |
询价 |
