N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.64 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

文件：1.45725 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly sui

文件：59.64 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters • Load Switch for Portable Applications

文件：1.04841 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

丝印：331M；Package：SOT-23-3；N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：280.65 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

N 沟道逻辑电平增强型场效应晶体管，20V，1.3A，0.21Ω

这些N沟道逻辑电平增强模式场效应晶体管采用飞兆专有的高单元密度、DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗而定制的。 此类器件特别适合笔记本电脑、便携电话、PCMCIA卡等低电压应用及其他需要采用极小封装外形表面贴装封装、具有快速开关和低线内功率损耗的电池供电电路。 •1.3 A，20 V。 RDS(ON) = 0.21 Ω @ VGS = 2.7 V RDS(ON) = 0.16 Ω @ VGS = 4.5 V\n•采用专有SuperSOT™-3技术设计的工业标准SOT-23表面贴装封装，可实现卓越的热性能和电气性能\n•高密度设计可实现极低的RDS(ON)\n•出色的导通阻抗和最大DC电流能力;

ONSEMI

安森美半导体