型号：HNM2302ALB；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 页数：4 Pages

HAOHAI

浩海电子

型号：KI2302DS；Package：SOT-23；N-Channel 1.25-W, 2.5-V MOSFET

■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A

文件：45.45 Kbytes 页数：2 Pages

KEXIN

科信电子

型号：NDS331N；Package：SOT-23；N-Channel Enhancement Mode MOSFET

General Features VDS = 20V ID =2.3 A RDS(ON)

文件：1.45725 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

型号：SI2302；Package：SOT-23；Plastic-Encapsulate MOSFETS

N-Channel 20-V(D-S) MOSFET FEATURE ● TrenchFET Power MOSFET APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：832.45 Kbytes 页数：3 Pages

CHENDA

辰达半导体

型号：SI2302B；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：765.18 Kbytes 页数：3 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

型号：SI2302B；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE TrenchFET Power MOSFET APPLICATION Load Switch for Portable Devices DC/DC Converter

文件：540.78 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

型号：DO2302C；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.74159 Mbytes 页数：5 Pages

DOINGTER

杜因特

型号：DO2302F；Package：SOT-23；N-Channel MOSFET uses advanced trench technology

文件：1.54741 Mbytes 页数：3 Pages

DOINGTER

杜因特

型号：HM2302A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

文件：503.56 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

型号：HM2302F；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：886.97 Kbytes 页数：7 Pages

HMSEMI

华之美半导体