丝印：A2T；Package：MSOP；30 V, Micropower, Overvoltage Protection, Rail-to-Rail Input/Output Amplifiers

FEATURES Input overvoltage protection, 32 V above and below the supply rails No phase reversal for input voltage up to ±32 V beyond the power supply Rail-to-rail input and output swing Low power: 60 μA per amplifier typical Unity-gain bandwidth 800 kHz typical at VSY = ±15 V 550 kHz typical

文件：631.47 Kbytes 页数：25 Pages

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亚德诺

丝印：A2T；Package：MSOP；30 V, Micropower, Overvoltage Protection, Rail-to-Rail Input/Output Amplifiers

FEATURES Input overvoltage protection, 32 V above and below the supply rails No phase reversal for input voltage up to ±32 V beyond the power supply Rail-to-rail input and output swing Low power: 60 μA per amplifier typical Unity-gain bandwidth 800 kHz typical at VSY = ±15 V 550 kHz typical

文件：631.47 Kbytes 页数：25 Pages

AD

亚德诺

丝印：A2T；Package：MSOP；30 V, Micropower, Overvoltage Protection, Rail-to-Rail Input/Output Amplifiers

FEATURES Input overvoltage protection, 32 V above and below the supply rails No phase reversal for input voltage up to ±32 V beyond the power supply Rail-to-rail input and output swing Low power: 60 μA per amplifier typical Unity-gain bandwidth 800 kHz typical at VSY = ±15 V 550 kHz typical

文件：631.47 Kbytes 页数：25 Pages

AD

亚德诺

丝印：A2T；Package：MSOP；30 V, Micropower, Overvoltage Protection, Rail-to-Rail Input/Output Amplifiers

FEATURES Input overvoltage protection, 32 V above and below the supply rails No phase reversal for input voltage up to ±32 V beyond the power supply Rail-to-rail input and output swing Low power: 60 μA per amplifier typical Unity-gain bandwidth 800 kHz typical at VSY = ±15 V 550 kHz typical

文件：631.47 Kbytes 页数：25 Pages

AD

亚德诺

丝印：A2T；Package：MSOP；30 V, Micropower, Overvoltage Protection, Rail-to-Rail Input/Output Amplifiers

FEATURES Input overvoltage protection, 32 V above and below the supply rails No phase reversal for input voltage up to ±32 V beyond the power supply Rail-to-rail input and output swing Low power: 60 μA per amplifier typical Unity-gain bandwidth 800 kHz typical at VSY = ±15 V 550 kHz typical

文件：631.47 Kbytes 页数：25 Pages

AD

亚德诺

丝印：A2T45；Package：SOT-23-THIN；SN74AVC2T45 2-Bit, Dual Supply, Bus Transceiver with Configurable Level-Shifting and Translation

1 Features • Available in the Texas Instruments NanoFree™ Package • VCC Isolation Feature: If Either VCC Input Is at GND, Both Ports Are in the High-Impedance State • Dual Supply Rail Design • I/Os Are 4.6V Over Voltage Tolerant • Ioff Supports Partial-Power-Down Mode Operation • Max Data

文件：1.4186 Mbytes 页数：37 Pages

TI

德州仪器

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

恩XP

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

恩XP

RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

恩XP

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

恩XP