RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

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N--Channel Enhancement--Mode Lateral MOSFET

文件：669.21 Kbytes 页数：20 Pages

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RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

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RF Power LDMOS Transistor

N−Channel Enhancement−Mode Lateral MOSFET This 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. Features • Greater negative gate−source voltage range for improved Class C operation • On−chip matching (50 ohm in

文件：362.83 Kbytes 页数：20 Pages

恩XP

N--Channel Enhancement--Mode Lateral MOSFET

文件：669.21 Kbytes 页数：20 Pages

恩XP

728-960 MHz，2 W平均值，48 V Airfast® LDMOS射频功率晶体管

The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz. • Greater Negative Gate-Source Voltage Range for Improved Class C Operation\n• On-Chip Matching (50 Ohm Input, DC Blocked)\n• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function\n• Integrated ESD Protection\n• RoHS Compliant;

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