RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

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N--Channel Enhancement--Mode Lateral MOSFET

文件：602.67 Kbytes 页数：17 Pages

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RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

This 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1427 to 1517 MHz. Features • Advanced high performance in−package Doherty • Greater negative gate−source voltage range for improved Class C operation

文件：385.37 Kbytes 页数：17 Pages

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N--Channel Enhancement--Mode Lateral MOSFET

文件：602.67 Kbytes 页数：17 Pages

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1452-1511 MHz, 93 W平均值, 31 V Airfast®LDMOS射频功率晶体管

The A2T14H450-23NR6 93 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1452 to 1511 MHz. • Advanced high performance in-package Doherty\n• Greater negative gate-source voltage range for improved Class C operation\n• Designed for digital predistortion error correction systems\n• RoHS compliant;

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