N--Channel Enhancement--Mode Lateral MOSFETs

文件：493.04 Kbytes 页数：18 Pages

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N--Channel Enhancement--Mode Lateral MOSFETs

文件：493.04 Kbytes 页数：18 Pages

恩XP

400-2700 MHz, 2.5 W Avg., 28 V Airfast® RF Power LDMOS Transistor

The A2T27S020NR1 and A2T27S020GNR1 2.5 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 400 to 2700 MHz. • Greater negative gate-source voltage range for improved Class C operation\n• Designed for digital predistortion error correction systems\n• Universal broadband driver\n• RoHS compliant;

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