1PS300

Marking：A3；Package：SC-70；Dual high-speed switching diode

Featuresandbenefits Highswitchingspeed:trr4ns Repetitivepeakreversevoltage: VRRM85V Reversevoltage:VR80V AEC-Q101qualified Lowcapacitance:Cd2pF Repetitivepeakforwardcurrent: IFRM500mA VerysmallSMDplasticpackage

1SS181

Marking：A3；Package：SOT-23；SWITCHING DIODE

FEATURES Lowforwardvoltage Fastreverserecoverytime

1SS181

Marking：A3；Package：SOT-23；Plastic-Encapsulate Diodes

SWITCHINGDIODE Features: Lowon-statevoltagedrop; Shortreverserecoverytime Applications: High-speedswitchingcircuit.

1SS181

Marking：A3；Silicon Epitaxial Planar Switching Diode

1SS181

Marking：A3；Package：SOT-23；Switching Diodes

■Features ●Lowforwardvoltage.:VF(3)=0.92V(Typ.) ●Fastreverserecoverytime:trr=1.6ns(Typ.) ●Smalltotalcapacitance:CT=2.2pF(Typ.)

1SS181

Marking：A3；Package：SOT-23；Surface mount switching diode

FEATURES •Lowforwardvoltage VF(3)=0.92V(typ). •Fastswitching. •Fastreverserecoverytime:trr=1.6ns(typ) APPLICATIONS •Highspeedswitchingapplication.

1SS181

Marking：A3；Package：SOT-23；Plastic-Encapsulate Switching Diode

Features FastSwitchingDevice(TRR

1SS181

Marking：A3；Package：SOT-23；Switching DIODES

FEATURES •Lowforwardvoltage:VF(3)=0.92V(typ.) •Fastreverserecoverytime:trr=1.6ns(typ.)

74AHC30GU12

Marking：A3；Package：SOT1174-1；8-input NAND gate

1.Generaldescription The74AHC30;74AHCT30isahigh-speedSi-gateCMOSdeviceandispincompatiblewithLowpower SchottkyTTL(LSTTL).ItisspecifiedincompliancewithJEDECstandardNo.7-A. The74AHC30;74AHCT30providesan8-inputNANDfunction. 2.Featuresandbenefits •Balancedpr

AP22980FCF10-7

Marking：A3；Package：W-QFN1520-10；6V/6A LOW RON SWITCH WITH TRI-STATE SOFT-START

Features -IntegratedSingleChannelLoadSwitch -0.285VtoVBIAS(upto5.5V)InputVoltageRange -2.2Vto5.5VVBIASVoltageRange -LowRONofTyp.5.1mΩ(VBIAS=5V) -6AMaximumContinuousCurrent -LowQuiescentCurrentofTyp.60μA. -Tri-StateSlewRateControlatVIN=3.3V -15