丝印：A3；Package：SOT-343R；Silicon MMIC amplifier

DESCRIPTION Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • Integrated temperature compensated biasing • Con

文件：100.4 Kbytes 页数：12 Pages

PHI

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丝印：A3；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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硅MMIC放大器由带集成偏置的NPN双多晶硅晶体管组成。 集成温度补偿偏置\n低电流\n低噪声\n合并电源和RF输出引脚\n极高功率增益;

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