SI2302

丝印：A2SHB；Package：SOT-23；Plastic-Encapsulate MOSFETS

N-Channel20-V(D-S)MOSFET FEATURE ●TrenchFETPowerMOSFET APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SI2302

N- CHANNEL MOSFET in a SOT-23 Plastic Package

DESCRIPTIONS N-CHANNELMOSFETinaSOT-23PlasticPackage. FEATURES SuperhighdensecelldesignforlowRDS(ON),SOT-23package. APPLICATIONS Batterymanagement,Highspeedswitch,lowpowerDCtoDCconverter.

SI2302

N-Channel Enhancement Mode MOSFET

Feature ●16V/3.6A,RDS(ON)=100mΩ(MAX)@VGS=4.5V. RDS(ON)=140mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOT-23forSurfaceMountPackage. Applications ●PowerManagementPortableEquipmenta

SI2302

N-Channel Enhancement MOSFET

N-ChannelEnhancementMOSFET ■FEATURES TrenchFETPowerMOSFET

SI2302

Plastic-Encapsulate Mosfets

FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2302

N-Channel Enhancement Mode Field Effect Transistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •20V,3.0A,RDS(ON)=55mΩ@VGS=4.5V RDS(ON)=82mΩ@VGS=2.5V •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •Leadfreeproductisacquired •SOT-23Package •MarkingCode:S2 •Epo

SI2302

20 V N-Channel Enhancement Mode MOSFET

VDS=20V RDS(ON),Vgs@4.5V,Ids@3.6A

SI2302

N-Channel Enhancement Mode Field Effect Transistor

SI2302

Plastic-Encapsulate MOSFETS

SI2302

Small Signal MOSFETS;