NDS331N

Marking：A2SHB；Package：SOT-23；N-Channel Enhancement Mode MOSFET

GeneralFeatures VDS=20VID=2.3A RDS(ON)

NDS331N

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysui

NDS331N

Marking：331M；Package：SOT-23-3；N-Channel Logic Level Enhancement Mode Field Effect Transistor

NDS331N-NL

N-Channel 20 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters •LoadSwitchforPortableApplications

NGRUS331

NeutralGroundingResistorSystem,NGRSERIES–US

Description High-resistancegroundingpreventsmanyoftheproblems thatareassociatedwithungroundedandsolidlygrounded electricaldistributionandutilizationsystems.High-resistance groundingcanlimitpoint-of-faultdamage,eliminatetransient overvoltages,reducethearc-flashhazar

NT331

NPNsilicontransistor

Description •Generalsmallsignalamplifier Features •Lowcollectorsaturationvoltage:VCE(sat)=0.15V(Max.) •Extremelysmallsizepackage:0.8x0.6x0.4㎜Typ. •ComplementarypairwithNT332

NT331

Generalsmallsignalamplifier

NTE331

SiliconComplementaryTransistorsAudioPowerAmp,Switch

Description: TheNTE331(NPN)andNTE332(PNP)aresiliconepitaxial–basecomplementarypowertransistorsinaTO–220plasticpackageintendedforuseinpowerlinearandswitchingapplications.

PE331

NMaletoNFemaleLowLossTestCable

PI331MC-DR

300DPICISTwoLevelDigitalOutputModule

GeneralDescription ThePI331MC-DRisacontactimagesensor,CIS,modulewithanadditionalonboardcircuitthatdigitizestheanalogpixelsfromtheCISimagesensortoa“background-tracking”,two-leveldigitaloutputsignals.ItisbasedonCISmodule,thePI305M-A6manufacturedbyPIC,but