丝印：A2SHB；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

文件：886.97 Kbytes 页数：7 Pages

HMSEMI

华之美半导体

N-Channel Enhancement Mode Field Effect Transistor SMD

Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0

文件：276.91 Kbytes 页数：4 Pages

HAOHAI

浩海电子

HALF-BRIDGE DRIVER

Description The IR2302(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：205.29 Kbytes 页数：22 Pages

IRF

Gate drive supply range from 5 to 20V

文件：212.75 Kbytes 页数：22 Pages

IRF