丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current. Applications Intended for use in general purpose switching and phase control applications.

文件：803.68 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：7002；Package：SOT23；60V N-Channel Mosfet

Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays

文件：1.02199 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

Dual P-Channel 60-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：497.8 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

SOCKETS

Features 8-pin 35mm DIN rail or surface mount octal socket. Rated at 10A @ 600VAC and has pressure clamp terminals.

文件：210.96 Kbytes 页数：1 Pages

LITTELFUSE

力特

Single N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：265.68 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single N-Channel Enhancement Mode Field Effect Transistor

General Description This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low

文件：265.5 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These

文件：264.86 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Single N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：264.69 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体