NDS7002A

Marking：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

NDS7002A

Marking：7002；Package：SOT23；60V N-Channel Mosfet

Application Directlogic-levelinterface:TTL/CMOS Drivers:relays,solenoids,lamps,hammersdisplay, memories,transistors,etc. Batteryoperatedsystems Solid-staterelays

NDS7002A

Marking：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

NDS7003P

Dual P-Channel 60-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

NDS-8

SOCKETS

Features 8-pin35mmDINrailorsurfacemountoctalsocket.Ratedat 10A@600VACandhaspressureclampterminals.

NDS8410

Single N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

NDS8410A

Single N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisN-ChannelMOSFETareproducedusingFairchild’sproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thesedevicesareparticularlysuitedforlow

NDS8410S

Single N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription SO-8N-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.These

NDS8425

Single N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

NDS8426

Single N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes