型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:712;Package:SOT-23;Asymmetrical TVS Diode Features 200W peak pulse power (8/20ps) Ultra low leakage: nA level Operating voltage: 7V or 12V Low clamping voltage Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: $30kV' — IEC61000-4-4 (EFT) 40A (5/50ns) ~ IEC61000-4-5 (Li 文件:1.24583 Mbytes 页数:4 Pages | TECHPUBLIC 台舟电子 | TECHPUBLIC | ||
丝印:712;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products 文件:372.34 Kbytes 页数:13 Pages | ONSEMI 安森美半导体 | ONSEMI | ||
丝印:712;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used 文件:538.2 Kbytes 页数:14 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
丝印:712;Package:SOT-23;N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used 文件:116.2 Kbytes 页数:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
丝印:712;Package:SOT-23;Compatible with IEC 61000-4-2 (ESD): Air 15kV,Contact 8kV The PSM712 is an asymmetrical transient voltage suppressor (TVS) array, designed specifically for RS-485 applications. This device provides protection against ESD, tertiary lightning and switching transients. The PSM712 has a peak pulse power of 600 Watts for an 8/20μs waveshape and is avail 文件:497.9 Kbytes 页数:4 Pages | UMW 友台半导体 | UMW | ||
丝印:712;Package:SOT-23;Molded JEDEC SOT-23 Package The UMW SM712 is an asymmetrical transient voltage suppressor TVS) array, designed specifically for RS-485 applications. This device provides protection against ESD, tertiary lightning and switching transients. The UMW SM712 has a peak pulse power of 600 Watts for an 8/ 20μs waveshape and is 文件:528.99 Kbytes 页数:4 Pages | UMW 友台半导体 | UMW | ||
丝印:712;Package:SOT-23;TVS Diode Transient protection for high speed data lines IEC 61000-4-2(ESD)±15KV(air),±8KV(contact) IEC 61000-4-4(EFT) 40A (5/50ns) IEC 61000-4-5(Lightning) 12A (8/20us) Protects two +12V to -7V lines Low capacitance Low clamping voltage Solid-state silicon avalanche technology “-A” is an AEC-Q101 q 文件:200.65 Kbytes 页数:4 Pages | SMCDIODE 桑德斯微电子 | SMCDIODE | ||
丝印:712;Package:SOT-23;Asymmetrical TVS Diode for Extended Common-Mode RS-485 DESCRIPTION The SM712 transient voltage suppressor (TVS) diode is designed for asymmetrical (12V to -7V) protection in multi-point data transmission standard RS-485 applications. The SM712 may be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), 文件:1.20256 Mbytes 页数:4 Pages | LUGUANG 鲁光电子 | LUGUANG | ||
丝印:712;Package:SOT23-3;600W Asymmetrical TVS Diode Array Description The SM712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to 12V) from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SM712 can absorb repetitive ESD strikes above the 文件:1.14506 Mbytes 页数:5 Pages | Littelfuse 力特 | Littelfuse | ||
丝印:712;Package:SOT-23;TVS Diode Transient protection for high speed data lines IEC 61000-4-2(ESD)±15KV(air),±8KV(contact) IEC 61000-4-4(EFT) 40A (5/50ns) IEC 61000-4-5(Lightning) 12A (8/20us) Protects two +12V to -7V lines Low capacitance Low clamping voltage Solid-state silicon avalanche technology “-A” is an AEC-Q101 q 文件:200.65 Kbytes 页数:4 Pages | SMCDIODE 桑德斯微电子 | SMCDIODE |
详细参数
- 型号:
712
- 功能描述:
MOSFET SOT-23 N-CH ENHANCE
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
8488 |
全新原装正品/价格优惠/质量保障 |
询价 | ||
FAIRCHILD/仙童 |
25+ |
SOT23 |
154627 |
明嘉莱只做原装正品现货 |
询价 | ||
ONSEMI/安森美 |
25+ |
SOT-23 |
37633 |
ONSEMI/安森美全新特价NDS7002A即刻询购立享优惠#长期有货 |
询价 | ||
FSC |
16+ |
SOT-23 |
13600 |
进口原装现货/价格优势! |
询价 | ||
FAIRCHILD |
23+ |
SOT23-3 |
18960 |
公司优势库存热卖全新原装!欢迎来电 |
询价 | ||
FAIRCHILD |
SOT-23 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
进口仙童 |
24+ |
SOT-23 |
20000 |
原厂原装正品现货 |
询价 | ||
ON/安森美 |
2019+ |
SOT-23 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
ONSEMI |
2020 |
NA |
3000 |
全新原装!优势库存热卖中! |
询价 | ||
FAIRCHILD |
25+ |
SOT23 |
78900000 |
原厂直接发货进口原装 |
询价 |
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