ESDBW712C2-TP

Marking：712；Package：SOT-23；Asymmetrical TVS Diode

Features 200Wpeakpulsepower(8/20ps) Ultralowleakage:nAlevel Operatingvoltage:7Vor12V Lowclampingvoltage Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:$30kV' —IEC61000-4-4(EFT)40A(5/50ns) ~IEC61000-4-5(Li

NDS7002A

Marking：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

NDS7002A

Marking：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

NDS7002A

Marking：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

PSM712-LF-T7

Marking：712；Package：SOT-23；Compatible with IEC 61000-4-2 (ESD): Air 15kV,Contact 8kV

ThePSM712isanasymmetricaltransientvoltagesuppressor (TVS)array, designedspecificallyforRS-485applications.Thisdeviceprovides protection againstESD,tertiarylightningandswitchingtransients. ThePSM712hasapeakpulsepowerof600Wattsforan8/20μs waveshapeandisavail

SM712

Marking：712；Package：SOT-23；Molded JEDEC SOT-23 Package

TheUMWSM712isanasymmetricaltransientvoltagesuppressor TVS)array, designedspecificallyforRS-485applications.Thisdeviceprovides protection againstESD,tertiarylightningandswitchingtransients. TheUMWSM712hasapeakpulsepowerof600Wattsforan8/ 20μswaveshapeandis

SM712

Marking：712；Package：SOT-23；TVS Diode

Transientprotectionforhighspeeddatalines IEC61000-4-2(ESD)±15KV(air),±8KV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)12A(8/20us) Protectstwo+12Vto-7Vlines Lowcapacitance Lowclampingvoltage Solid-statesiliconavalanchetechnology “-A”isanAEC-Q101q

SM712

Marking：712；Package：SOT-23；Asymmetrical TVS Diode for Extended Common-Mode RS-485

DESCRIPTION TheSM712transientvoltagesuppressor(TVS) diodeisdesignedforasymmetrical(12Vto-7V) protectioninmulti-pointdatatransmissionstandard RS-485applications.TheSM712maybeusedto protectdevicesfromtransientvoltagesresulting fromelectrostaticdischarge(ESD),

SM712-02HTG

Marking：712；Package：SOT23-3；600W Asymmetrical TVS Diode Array

Description TheSM712TVSDiodeArrayisdesignedtoprotectRS-485applicationswithasymmetricalworkingvoltages(-7Vto12V)fromdamageduetoelectrostaticdischarge(ESD),electricalfasttransients(EFT),andlightninginducedsurges. TheSM712canabsorbrepetitiveESDstrikesabovethe

SM712TR

Marking：712；Package：SOT-23；TVS Diode

Transientprotectionforhighspeeddatalines IEC61000-4-2(ESD)±15KV(air),±8KV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)12A(8/20us) Protectstwo+12Vto-7Vlines Lowcapacitance Lowclampingvoltage Solid-statesiliconavalanchetechnology “-A”isanAEC-Q101q