丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：WSON(DSG)；BQ2947 Overvoltage Protection for 2-Series to 4-Series Cell Li-Ion Batteries with External Delay Capacitor

1 Features • 2-, 3-, and 4-series cell overvoltage protection • External capacitor-programmed delay timer • Factory programmed OVP threshold (threshold range 3.85 V to 4.6 V) • Output options: active high or open drain active low • High-accuracy overvoltage protection: ±10 mV • Low power c

文件：1.87733 Mbytes 页数：29 Pages

TI

德州仪器

丝印：712；Package：SOT-23；Asymmetrical TVS Diode

Features 200W peak pulse power (8/20ps) Ultra low leakage: nA level Operating voltage: 7V or 12V Low clamping voltage Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: $30kV' — IEC61000-4-4 (EFT) 40A (5/50ns) ~ IEC61000-4-5 (Li

文件：1.24583 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 页数：14 Pages

Fairchild

仙童半导体

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

Fairchild

仙童半导体

丝印：712；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：712；Package：SOT-23；Compatible with IEC 61000-4-2 (ESD): Air 15kV,Contact 8kV

The PSM712 is an asymmetrical transient voltage suppressor (TVS) array, designed specifically for RS-485 applications. This device provides protection against ESD, tertiary lightning and switching transients. The PSM712 has a peak pulse power of 600 Watts for an 8/20μs waveshape and is avail

文件：497.9 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：712；Package：SOT-23；Molded JEDEC SOT-23 Package

The UMW SM712 is an asymmetrical transient voltage suppressor TVS) array, designed specifically for RS-485 applications. This device provides protection against ESD, tertiary lightning and switching transients. The UMW SM712 has a peak pulse power of 600 Watts for an 8/ 20μs waveshape and is

文件：528.99 Kbytes 页数：4 Pages

UMW

友台半导体

丝印：712；Package：SOT-23；TVS Diode

Transient protection for high speed data lines IEC 61000-4-2(ESD)±15KV(air),±8KV(contact) IEC 61000-4-4(EFT) 40A (5/50ns) IEC 61000-4-5(Lightning) 12A (8/20us) Protects two +12V to -7V lines Low capacitance Low clamping voltage Solid-state silicon avalanche technology “-A” is an AEC-Q101 q

文件：200.65 Kbytes 页数：4 Pages

SMCDIODE

桑德斯微电子