Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini mize on-state resistance and provide superior switching performance.

文件：191.77 Kbytes 页数：8 Pages

FAIRCHILD

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Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：343.83 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

文件：209.45 Kbytes 页数：8 Pages

FAIRCHILD

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Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (–4.5V to – 20V). Features • –3.5 A, –20 V RDS(ON) = 100 mΩ

文件：342.32 Kbytes 页数：10 Pages

FAIRCHILD

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Dual P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). Features • –2.3 A, –60 V RDS(ON)= 250 mΩ@ VGS

文件：342.89 Kbytes 页数：10 Pages

FAIRCHILD

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Dual P-Channel 6 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 UIS Tested APPLICATIONS • Load Switches

文件：1.05431 Mbytes 页数：9 Pages

VBSEMI

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Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performa

文件：366.07 Kbytes 页数：13 Pages

FAIRCHILD

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N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

文件：1.18359 Mbytes 页数：14 Pages

VBSEMI

微碧半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and wit

文件：342.68 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

文件：196.45 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体