NDS9945

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription SO-8N-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtoprovidesuperiorswitchingperformanceandminimizeon-stateresistance.These

NDS9947

Dual P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgatedrivevoltageratings(–4.5Vto–20V). Features •–3.5A,–20VRDS(ON)=100mΩ

NDS9948

Dual P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgatedrivevoltageratings(4.5V–20V). Features •–2.3A,–60VRDS(ON)=250mΩ@VGS

NDS9948-NL

Dual P-Channel 6 0-V (D-S) MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitches

NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription ThesedualN-andP-channelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperforma

NDS9952A-NL

N- and P-Channel 30 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

NDS9953A

Dual P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

NDS9955

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription SO-8N-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtoprovidesuperiorswitchingperformanceandminimizeon-stateresistance.These

NDS9956

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit

NDS9956A

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwit