P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：465.07 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

文件：204.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

文件：204.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Silicon NPN Transistor RF Power Output, High Frequency

Features: ● High Transition Frequency ● Output of 0.6W can be obtained in the VHF Band (f = 175MHz).

文件：19.61 Kbytes 页数：2 Pages

NTE