Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

文件：204.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package

Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diod

文件：204.03 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：DO-214AC，SMA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 3A 40V 1201 SMA2

ONSEMI

安森美半导体

Silicon NPN Transistor RF Power Output, High Frequency

Features: ● High Transition Frequency ● Output of 0.6W can be obtained in the VHF Band (f = 175MHz).

文件：19.61 Kbytes 页数：2 Pages

NTE

POWER MOSFETS IN HERMETIC ISOLATED TO-257AA PACKAGE

文件：39.81 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.58Ω(Max)@VGS= 10V DESCRIPTION ·Power Supplies ·Inductive Loads ·Power Motor Control

文件：371.04 Kbytes 页数：2 Pages

ISC

无锡固电