Dual N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

文件：331.08 Kbytes 页数：10 Pages

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Dual N-Channel Enhancement Mode Field Effect Transistor

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文件：332.45 Kbytes 页数：32 Pages

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