NDT

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION TheNDTseriesisarangeoflowprofileDCDCconvertersofferingdualoutputsovera2:1inputvoltagerange.Allpartsdeliver3Woutputpowerupto85°Cwithoutheatsinking.Aflybackoscillatordesignwithisolatedfeedbackisusedtogiveregulationoverthefulloperatingrange

NDT014

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription PowerSOTN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.

NDT014L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperforman

NDT014L

N 沟道逻辑电平增强型场效应晶体管，60V，2.8A，160mΩ; •2.8 A，60 V。 RDS(ON) = 0.2 Ω @ VGS = 4.5 V，RDS(ON) = 0.16 Ω @ VGS = 10 V。\n•高密度设计可实现极低的RDS(ON)。\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。\n;

这些N沟道逻辑电平增强模式功率场效应晶体管采用飞兆专有的高单元密度、DMOS技术生产。这种高密度工艺是专为最大限度地降低通态电阻并提供卓越开关性能，以及在雪崩和交换模式下承受高能量脉冲而定制的。这些器件特别适合DC电机控制和DC/DC转换等需要快速开关、低线内功率损耗和瞬态电阻的低压应用。

NDT01N60

功率 MOSFET 600V 0.4A 8.5 Ω 单 N 沟道 SOT-223; • 100% Avalanche Tested\n• This Device is PbFree, Halogen Free/BFR Free and RoHS Compliant;

功率 MOSFET 600V 8.5 Ω 单 N 沟道

NDT2412

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION TheNDTseriesisarangeoflowprofileDCDCconvertersofferingdualoutputsovera2:1inputvoltagerange.Allpartsdeliver3Woutputpowerupto85°Cwithoutheatsinking.Aflybackoscillatordesignwithisolatedfeedbackisusedtogiveregulationoverthefulloperatingrange

NDT2415

Isolated 3W Wide Input Dual Output DC-DC Converters

DESCRIPTION TheNDTseriesisarangeoflowprofileDCDCconvertersofferingdualoutputsovera2:1inputvoltagerange.Allpartsdeliver3Woutputpowerupto85°Cwithoutheatsinking.Aflybackoscillatordesignwithisolatedfeedbackisusedtogiveregulationoverthefulloperatingrange

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription This60VP-ChannelMOSFETisproducedusingFairchildSemiconductor’shighvoltageTrenchprocess. Ithasbeenoptimizedforpowermanagementplications. Applications •DC/DCconverter •Powermanagement

NDT3055

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

NDT3055

60V N-Channel

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superiorswitchingperformance,andwithstandhigh energypulseintheavalancheandcommutation modes.Thesedevicesareparticularly