丝印：NDT3055L；Package：SOT-223；60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：NDT3055L；Package：SOT-223；60V N-Channel

General Description These logic level N-Channel enhancement This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly

文件：287.25 Kbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92605 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

文件：228.1 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：378.84 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel 60-V (D-S) MOSFET

文件：1.01032 Mbytes 页数：8 Pages

VBSEMI

微碧半导体