丝印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.92605 Mbytes 页数：5 Pages

TECHPUBLIC

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丝印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94103 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：3055；Package：SOT223；N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES 60V, 4A, Rps(on) = 85mQ @Vgs = 10V. Rpsion) = 100mQ @Vgs = 4.5V. High dense cell design for extremely low Rps(on)- Rugged and reliable. Lead free product is acquired. SOT-223 package.

文件：1.94154 Mbytes 页数：5 Pages

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文件：609.73 Kbytes 页数：3 Pages

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文件：873.32 Kbytes 页数：4 Pages

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丝印：3055L；Package：SOT-223；Power MOSFET 3.0 A, 60 V, Logic Level, N?묬hannel SOT??23

文件：80.8 Kbytes 页数：6 Pages

ONSEMI

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丝印：3055L；Package：SOT-223；3.0 A, 60 V, Logic Level, N.Channel SOT??23

文件：79.23 Kbytes 页数：6 Pages

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丝印：3055L；Package：SOT-223；Power MOSFET

文件：81.84 Kbytes 页数：6 Pages

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文件：370.28 Kbytes 页数：4 Pages

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MULTIPLEXED TWO-WIRE HALL-EFFECT SENSOR ICs The UGN3055U Hall-effect sensor is a digital magnetic sensing IC capable of communicating over a two-wire power/signal bus. Using a sequential addressing scheme, the device responds to a signal on the bus and returns the diagnostic status of the IC, as

文件：111.08 Kbytes 页数：8 Pages

ALLEGRO