NDT3055L中文资料翊欧数据手册PDF规格书

General Description

These logic level N-Channel enhancement This very

high density process is especially tailored to

minimize on-state resistance and provide

superior switching performance, and withstand high

energy pulse in the avalanche and commutation

modes. These devices are particularly suited for

low voltage applications such as DC motor control

and DC/DC conversion where fast switching, low inline

power loss, and resistance to transients are

needed.

特性 Features

Low drive requirements allowing operation directly from logic

drivers. VGS(TH) < 2V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

VDS (V) = 60V

RDS(ON)< 100mΩ (V GS = 10V)

RDS(ON)