Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo

文件：354.63 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

Dual N & P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

75Ω 34dB CATV Amplifier 50 - 1003MHz

Key Features ■ High Gain: 34dB @ 1003MHz ■ Adjustable Bias ■ 50 - 1003 MHz BW ■ 46dBmV/ch flat tilt ■ Low Noise: 4.5dB ■ Excellent Composite Distortion ■ pHEMT / MESFET device technologies ■ Compact Size: 40P 5x7 QFN ■ Power Consumption (24V, 260mA –5.8W)

文件：2.11669 Mbytes 页数：14 Pages

QORVO

威讯联合

75Ω 34dB CATV Amplifier 50 - 1003MHz

Key Features ■ High Gain: 34dB @ 1003MHz ■ Adjustable Bias ■ 50 - 1003 MHz BW ■ 46dBmV/ch flat tilt ■ Low Noise: 4.5dB ■ Excellent Composite Distortion ■ pHEMT / MESFET device technologies ■ Compact Size: 40P 5x7 QFN ■ Power Consumption (24V, 260mA –5.8W)

文件：2.11669 Mbytes 页数：14 Pages

QORVO

威讯联合

75Ω 34dB CATV Amplifier 50 - 1003MHz

Key Features ■ High Gain: 34dB @ 1003MHz ■ Adjustable Bias ■ 50 - 1003 MHz BW ■ 46dBmV/ch flat tilt ■ Low Noise: 4.5dB ■ Excellent Composite Distortion ■ pHEMT / MESFET device technologies ■ Compact Size: 40P 5x7 QFN ■ Power Consumption (24V, 260mA –5.8W)

文件：2.11669 Mbytes 页数：14 Pages

QORVO

威讯联合