NDSH30120C-F155芯片代码Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NDSH30120C-F155	文件：321.94 Kbytes Page：6 Pages	丝印：DSH30120C；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：321.94 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI
NDSH30120CDN	文件：302.2 Kbytes Page：6 Pages	丝印：DSH30120CDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil 文件：302.2 Kbytes 页数：6 Pages	ONSEMI 安森美半导体	ONSEMI

更多DSH30120C供应商更新时间2025-8-9 9:11:00