丝印：DSH30120CDN；Package：TO-247-3LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next gen • Max Junction Temperature 175 °C\n• High Surge Current Capacity\n• No Reverse Recovery / No Forward Recovery\n• Low Vf @ TJ:175 °C;

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Schottky Barrier Rectifier Trench-based, High Performance

This Trench Schottky rectifier is high performance device in SO−8 FL package. The lower forward voltage, less leakage current, and small junction capacitance are suitable to high switching frequency high density DC to DC conversion application. Offering higher avalanche energy capability for O

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Schottky Barrier Rectifier Trench-based, High Performance

Features • Lower Forward Voltage Drop • Less Leakage Current in High Temperature • Small Junction Capacitance for High Switching Frequency • Higher Avalanche Energy Capability • 175°C Operating Junction Temperature • Good Alternative Solution of SMC and DPAK Package • Small Footprint − Land

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Super Bright LED Indicator Super Purple, 3mm

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