P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.94 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：227.54 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

安森美半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.94 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：227.54 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

P-Channel 35 V (D-S) MOSFET

文件：1.7476 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

P 沟道增强型场效应晶体管 -30V，-5A，65mΩ

功率SOT N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件特别适用于笔记本电脑功率管理和DC电机控制等低电压应用。 •-5A，-30V。 RDS(ON) = 0.065 RDS(ON) = 0.3 Ω @ VGS = -10VRDS(ON) = 0.1 RDS(ON) = 0.3 Ω @ VGS = -4.5V\n•高密度设计可实现极低的RDS(ON)。\n•高功率和高电流处理能力，采用广泛使用的表面贴装封装。;

ONSEMI

安森美半导体