P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.24 Kbytes 页数：6 Pages

FAIRCHILD

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P-Channel Enhancement Mode Field Effect Transistor

ONSEMI

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P-Channel Enhancement Mode Field Effect Transistor

General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

文件：92.24 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

P-Channel 35 V (D-S) MOSFET

文件：999.87 Kbytes 页数：8 Pages

VBSEMI

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P 沟道增强型场效应晶体管 -30V，-5.9A，50mΩ

功率SOT N沟道增强模式功率场效应晶体管采用飞兆专有的高密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 这些器件特别适合笔记本电脑电源管理和其他电池供电电路中的低电压应用，此类应用需要快速开关、低线路内功率损耗以及抗瞬变能力。 •-5.9A，-30V。 RDS(ON) = 0.05 Ω @ VGS = -10V, RDS(ON) = 0.07 Ω @ VGS = -6V, RDS(ON) = 0.09 Ω @ VGS = -4.5V。\n•高密度单元设计，可实现极低的RDS(ON)。\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。;

ONSEMI

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