Silicon Carbide (SiC) Schottky Diode 40 A, 1200 V, D3, TO-247-3L NDSH40120CDN test

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

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安森美半导体

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next gen • Max Junction Temperature 175°C\n• High system reliability in high ambient temperature\n• High Surge Current Capacity\n• High system reliability\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery\n• Low switching loss;

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Very Low Forward Voltage Trench-based Schottky Rectifier

文件：117.93 Kbytes 页数：8 Pages

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安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：133.71 Kbytes 页数：8 Pages

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安森美半导体

Very Low Forward Voltage Trench-based Schottky Rectifier

文件：117.93 Kbytes 页数：8 Pages

ONSEMI

安森美半导体