碳化硅（SiC）肖特基二极管 - EliteSiC系列10A 1700V D1 TO-247-2L封装

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the • Max Junction Temperature\n• Tj = 175°C\n• High Surge Current Capacity\n• Avalanche Rated 361 mJ\n• Positive Temperature Coefficient\n• Ease of Paralleling\n• No Reverse Recovery / No Forward Recovery;

ONSEMI

安森美半导体

丝印：NDSH10170A；Package：TO-247-2LD；Silicon Carbide (SiC) Schottky Diode – EliteSiC,10 A, 1700 V, D1, TO-247-2L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：304.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-247-2；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：SIC JBS 1700V 10A TO247

ONSEMI

安森美半导体

High voltage power Schottky rectifier

Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPA

文件：293.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

RGB color sensor integrated in small and thin package

S10170 is a color sensor molded into a plastic package having a 3-channel (RGB) photodiode sensitive to the Red (λ=590 nm Min.), Green (λ=480 to 600 nm) and Blue (λ=400 to 540 nm) regions of the spectrum. When compared to the previous model (S9702), S10170 is significantly miniaturized the package

文件：66.33 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

High voltage power Schottky rectifier

Description Dual centre tab Schottky rectifier designed for high frequency switch mode power supplies. Features and benefits ■ High junction temperature capability ■ Good trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability spe

文件：135.04 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体