NCE30NP1812K

Marking：NCE30NP1812K；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP1812Kusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.The complementaryMOSFETsmaybeusedtoformalevelshifted highsideswitch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=30V,ID=18A RDS(ON)

NCE30NP1812Q

Marking：NCE30NP1812Q；Package：DFN3X3-8L；NCE N-Channel and P-Channel Enhancement Mode Power MOSFET

Description TheNCE30NP1812Qusesadvancedtrenchtechnologyto provideexcellentRDS(ON)andlowgatecharge.Thisdeviceis suitableforuseininverterandotherapplications. GeneraFeatures N-channelP-channel ●VDS=30V,ID=18A●VDS=-30V,ID=-12A RDS(ON)

NCE30P06J

Marking：NCE30P06J；Package：DFN2X2-6L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P06Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-30V,ID=-6.5A RDS(ON

NCE30P10S

Marking：NCE30P10S；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P10Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas4.5V.Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-10A RDS(ON)

NCE30P12BS

Marking：NCE30P12BS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P12BSusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas4.5V.Thisdeviceissuitableforuseas aloadswitchorinPWMapplications.GeneralFeatures ●VDS=-30V,ID=-12A RDS(ON)

NCE30P15AS

Marking：NCE30P15AS；Package：SOP-8；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P15ASusesadvancedtrenchtechnologyto provideexcellentRDS(ON),Thisdeviceissuitableforuseasa loadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-15A RDS(ON)

NCE30P16Q

Marking：NCE30P16Q；Package：DFN3.3X3.3；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P16Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-16A RDS(ON)

NCE30P20Q

Marking：NCE30P20Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P20Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications.GeneralFeatures ●VDS=-30V,ID=-20A RDS(ON)

NCE30P25BQ

Marking：NCE30P25BQ；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P25BQusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitableforuse asaloadswitchorinPWMapplications.Application ●PWMapplications ●Loadswitch ●Powermanagement GeneralFeatures ●VDS=-30V,ID=-25A RDS(O

NCE30P25Q

Marking：NCE30P25Q；Package：DFN3.3X3.3-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE30P25Qusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. GeneralFeatures ●VDS=-30V,ID=-25A RDS(ON)