NCE020N30K芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE020N30K	文件：711.88 Kbytes Page：7 Pages	丝印：NCE020N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE020N30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =180A RDS(ON) =1.9 mΩ @ VGS=10V (Typ) RDS(ON) =2.6 mΩ @ VGS=4.5V (Typ) ● High density 文件：711.88 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE020N30K	文件：711.88 Kbytes Page：7 Pages	丝印：NCE020N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE020N30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =180A RDS(ON) =1.9 mΩ @ VGS=10V (Typ) RDS(ON) =2.6 mΩ @ VGS=4.5V (Typ) ● High density 文件：711.88 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE020N30K供应商更新时间2025-9-16 15:14:00