丝印：NCE2030；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：404.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030U；Package：TO-262；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：378.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030K；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：443.17 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：404.35 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030U；Package：TO-262；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2030U uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =30A RDS(ON)

文件：378.79 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2030K；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

文件：443.17 Kbytes 页数：7 Pages

NCEPOWER

新洁能

N-Channel 20-V (D-S)175 C MOSFET

文件：917.84 Kbytes 页数：6 Pages

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