丝印：NCE2013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON)

文件：696.03 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE2013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON)

文件：696.03 Kbytes 页数：7 Pages

NCEPOWER

新洁能