NCE2013J芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE2013J	文件：696.03 Kbytes Page：7 Pages	丝印：NCE2013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON) 文件：696.03 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE2013J	文件：696.03 Kbytes Page：7 Pages	丝印：NCE2013J；Package：DFN2X2-6L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2013J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = 20V,ID = 13A RDS(ON) 文件：696.03 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE2013J供应商更新时间2022-6-12 10:12:00