NCE042N30K芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
NCE042N30K	文件：781.69 Kbytes Page：7 Pages	丝印：NCE042N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE042N30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) =3.2mΩ @ VGS=10V RDS(ON) =6.8mΩ @ VGS=4.5V ● High density cell design f 文件：781.69 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER
NCE042N30K	文件：781.69 Kbytes Page：7 Pages	丝印：NCE042N30K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET Description The NCE042N30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) =3.2mΩ @ VGS=10V RDS(ON) =6.8mΩ @ VGS=4.5V ● High density cell design f 文件：781.69 Kbytes 页数：7 Pages	NCEPOWER 新洁能	NCEPOWER

更多NCE042N30K供应商更新时间2025-9-16 15:45:00