丝印：NCE15P30；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

文件：775.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE15P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

文件：801.23 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE15P30；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

文件：775.15 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：NCE15P30K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description The NCE15P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-150V,ID =-30A RDS(ON)

文件：801.23 Kbytes 页数：7 Pages

NCEPOWER

新洁能